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| 5 2 ' % + ( + % # 6 + 1 0 & g x k e g 0 c o g 6 [ r g 0 c o g 5 r g e 0 q * d igbt module 2MBI300U4H-170 ms5f 6137 ms5f6137 1 13 may. 27 ? 05 t.miyasaka y. s e k i k.yamada s.miyashita may. 27 ? 05
2 * d 4 g x k u g f 4 g e q t f u & c v g % n c u u k h k e c v k q p + p f % q p v g p v # r r n k g f f c v g & t c y p % j g e m g f % j g e m g f # r r t q x g f ' p c e v o g p v + u u w g f f c v g ms5f6137 13 may.-27 - ? 05 k.yamada t.miyasaka y. s e k i * c ms5f6137 13 2MBI300U4H-170 2. equivalent circuit 1. outline drawing ( unit : mm ) 3 * c ms5f6137 13 4 3 . a b s o l u t e m a x i m u m r a t i n g s ( a t t c = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d b tc=25c tc=80c tc=25c tc=80c (*1) all terminals should be connected together when isolation test will be done. (*2) recommendable value : mounting 2.5~3.5 nm (m5 or m6) (*3) recommendable value : terminals 3.5~4.5 nm (m6) 4 . e l e c t r i c a l c h a r a c t e r i s t i c s ( a t t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) (*4) biggest internal terminal resistance among arm. turn-off time forward on voltage reverse recovery time lead resistance, terminal-chip(*4) ton input capacitance turn-on time zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage vge(th) i t e m s - ic = 300ma tj= 25c tj=125c vge=15v ic = 300a tj= 25c tj=125c 4.5 vce = 20v - rg = 1.5 - tj=125c - trr vge=0v vce(sat) (terminal) cies vce=10v,vge=0v,f=1mhz toff tf tr tr (i) vce(sat) (chip) s if = 300a - - if = 300a -0.6 tj= 25c - 2.00 2.35 v 2.00 1.80 2.15 - 2.20 - s 1.50 0.09 0.30 1.20 0.60 - i t e m s s y m b o l s c o n d i t i o n s vces collector-emitter voltage 300 800 600 1ms continuous v 20 v vges 1700 ac : 1min. 1ms 1device w gate-emitter voltage collector current junction temperature collector power dissipation 300 150 ic icp 400 u n i t s -ic tj m i n . c h a r a c t e r i s t i c s -40 ~ +125 600 1470 a c storage temperature isolation voltage between terminal and copper base (*1) m a x . t y p . 3400 vac 4.5 3.5 nm viso -ic pulse pc tstg screw torque - mounting (*2) terminals (*3) s y m b o l s vge=20v vce = 0v c o n d i t i o n s vge = 0v vce = 1700v iges ices na 4.0 ma 800 6.5 -- - v - 8.5 v u n i t s - 2.25 2.40 m a x i m u m r a t i n g s - 2.45 2.60 - -2.85 2.65 - - -0.05 -0.55 - vf (terminal) vf (chip) -nf 28 0.62 tj= 25c - tj=125c - vge=15v m r lead - 0.53 0.39 vcc = 900v ic = 300a * c ms5f6137 13 5 . 8 e e + e 8 % ' 4 ) 8 ) ' 8 ) ' 8 % ' + e 8 # 8 8 + e 8 % ' :* :* :* :* :* :* q p v t v t k v q h h v h v t t + t t v 5 . t h e r m a l r e s i s t a n c e c h a r a c t e r i s t i c s (*5) this is the value which is defined mounting on the additional cooling fin with thermal compound. 6 . i n d i c a t i o n o n m o d u l e l o g o o f p r o d u c t i o n l o t . n o . p l a c e o f m a n u f a c t u r i n g ( c o d e ) 7 . a p p l i c a b l e c a t e g o r y this specification is applied to igbt module named 2MBI300U4H-170 . 8 . s t o r a g e a n d t r a n s p o r t a t i o n n o t e s n the module should be stored at a standard temperature of 5 to 35c and humidity of 45 to 75% . n store modules in a place with few temperature changes in order to avoid condensation on the module surface. n avoid exposure to corrosive gases and dust. n avoid excessive external force on the module. n store modules with unprocessed terminals. n do not drop or otherwise shock the modules when transporting. 9 . d e f i n i t i o n s o f s w i t c h i n g t i m e 1 0 . p a c k i n g a n d l a b e l i n g display on the packing box - logo of production - type name - lot no - products quantity in a packing box fwd 0.0125 - - 0.085 --0.14 u n i t s m i n . t y p . m a x . i t e m s s y m b o l s c o n d i t i o n s c h a r a c t e r i s t i c s 3 0 0 a 1 7 0 0 v c/w 2 m b i 3 0 0 u 4 h - 1 7 0 contact thermal resistance (1device) (*5) rth(c-f) with thermal compound thermal resistance(1device) rth(j-c) - - igbt * c ms5f6137 13 11. reliability test results 6 r e l i a b i l i t y t e s t i t e m s test cate- gories test items test methods and conditions reference norms eiaj ed-4701 (aug.-2001 edition) number of sample accept- ance number 1 terminal strength pull force : 40n test method 401 5 (0:1) (pull test) test time : 101 sec. method > 2 mounting strength screw torque : 2.5 ~ 3.5 n cc m(m5) test method 402 5 (0:1) 3.5~4.5n cc m(m6) method > test time : 101 sec. 3 vibration range of frequency : 10 ~ 500hz test method 403 5 (0:1) sweeping time : 15 min. reference 1 acceleration : 100m/s 2 condition code b sweeping direction : each x,y,z axis test time : 6 hr. (2hr./direction) 4 shock maximum acceleration : 5000m/s 2 test method 404 5 (0:1) pulse width : 1.0msec. condition code b direction : each x,y,z axis test time : 3 times/direction 1 high temperature storage temp. : 1255 =? test method 201 5 (0:1) storage test duration : 1000hr. 2 low temperature storage temp. : -405 =? test method 202 5 (0:1) storage test duration : 1000hr. 3 temperature storage temp. : 852 =? test method 103 5 (0:1) humidity relative humidity : 855% test code c storage test duration : 1000hr. 4 unsaturated test temp. : 120 :? 2 =? test method 103 5 (0:1) pressurized vapor test humidity : 855% test code e test duration : 96hr. 5 temperature test method 105 5 (0:1) cycle test temp. : low temp. -40 :? 5 =? hi g h temp. 125 :? 5 =? rt 5 ~ 35 =? dwell time : high ~ rt ~ low ~ rt 1hr. 0.5hr. 1hr. 0.5hr. number of cycles : 100 cycles 6 thermal shock +0 test method 307 5 ( 0:1 ) test temp. : high temp. 100 - 5 =? method > +5 condition code a low temp. 0 - 0 =? used liquid : water with ice and boiling water dipping time : 5 min. par each temp. transfer time : 10 sec. number of cycles : 10 cycles mechanical tests environment tests * c ms5f6137 13 7 r e l i a b i l i t y t e s t i t e m s test cate- gories test items test methods and conditions reference norms eiaj ed-4701 (aug.-2001 edition) number of sample accept- ance number 1 high temperature test method 101 5 (0:1) reverse bias test temp. : ta = 125 :? 5 =? (tj > 150 =? ) bias voltage : vc = 0.8vces bias method : applied dc voltage to c-e vge = 0v test duration : 1000hr. 2 high temperature test method 101 5 (0:1) bias (for gate) test temp. : ta = 125 :? 5 =? (tj > 150 =? ) bias voltage : vc = vge = +20v or -20v bias method : applied dc voltage to g-e vce = 0v test duration : 1000hr. 3 temperature test method 102 5 (0:1) humidity bias test temp. : 85 :? 2 o c condition code c relative humidity : 85 :? 5% bias voltage : vc = 0.8vces bias method : applied dc voltage to c-e vge = 0v test duration : 1000hr. 4 intermitted on time : 2 sec. test method 106 5 (0:1) operatinglife offtime : 18sec. (power cycle) test temp. : ' t j =1005 de g (forigbt) t j > 150 =? , ta=255 =? number of cycles : 15000 cycles endurance tests endurance tests f a i l u r e c r i t e r i a item characteristic symbol failure criteria unit note lower limit upper limit electrical leakage current ices - usl2 ma characteristic iges - usl2 p a gate threshold voltage vge(th) lsl0.8 usl1.2 ma saturation voltage vce(sat) - usl1.2 v forward voltage vf - usl1.2 v thermal igbt ' vge - usl1.2 mv resistance or ' vce fwd ' vf - usl1.2 mv isolation voltage viso broken insulation - visual visual inspection inspection peeling - the visual sample - plating and the others lsl : lower specified limit. usl : upper specified limit. note : each parameter measurement read-outs shall be made after stab ilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. and in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. each parameter measurement read-outs shall be made after stab ilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. and in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. * c ms5f6137 13 8 r e l i a b i l i t y t e s t r e s u l t s test cate- gorie s test items reference norms eiaj ed-4701 (aug.-2001 edition) number of test sample number of failure sample 1 terminal strength test method 401 50 (pull test) method > 2 mounting strength test method 402 50 method > 3vibration test method 403 50 condition code b 4 shock test method 404 50 condition code b 1 high temperature storage test method 201 50 2 low temperature storage test method 202 50 3 temperature humidity test method 103 5* storage test code c 4 unsaturated test method 103 50 pressurized vapor test code e 5 temperature cycle test method 105 50 6 thermal shock test method 307 50 method > condition code a 1 high temperature reverse bias test method 101 5* 2 high temperature bias test method 101 50 ( for gate ) 3 temperature humidity bias test method 102 5* condition code c 4 intermitted operating life test method 106 50 (power cycling) (forigbt) * under confirmation mechanical tests environment tests endurance tests * c ms5f6137 13 9 collector current vs. collector-emitter voltage (typ.) collector current vs. collector-emitter voltage (typ.) collector current vs. collector-emitter voltage (typ.) collector-emitter voltage vs. gate-emitter voltage (typ.) tj= 125c/ chip capacitance vs. collector-emitter voltage (typ.) dynamic gate charge (typ.) tj= 25c / chip vge=15v / chip tj=25c / chip vge=0v, f= 1mhz, tj= 25c vcc=900v b ic=300a b tj= 25c 0 200 400 600 800 012345 collector-emitter voltage : vce [v] collector current : ic [a ] vge=20v 15v 12v 10v 8v 0 200 400 600 800 012345 collector-emitter voltage : vce [v] collector current : ic [a ] vge=20v 15v 12v 10v 8v 0 200 400 600 800 012345 collector-emitter voltage : vce [v] collector current : ic [a] tj=125c tj=25c 0 2 4 6 8 10 5 10152025 gate-emitter voltage : vge [v] collector - emitter voltage : vce [ v ] ic=600a ic=300a ic=150a 0.1 1.0 10.0 100.0 1000.0 0102030 collector-emitter voltage : vce [v] ca p acitance : cies, coes, cres [ nf ] cies coes cres 0 200 400 600 800 1000 gate charge : qg [nc] collector-emitter voltage : vce [ 200v/div ] gate - emitter voltage : vge [ 5v/div ] vge vce * c ms5f6137 13 10 vcc=900v, ic=300a, vge=15v, tj= 25c switching loss vs. collector current (typ.) vcc=900v, vge=15v, rg=1.5 vcc=900v, ic=300a, vge=15v, tj= 125c +vge=15v,-vge <= 15v, rg >= 1.5 ,tj <= 125c switching time vs. collector current (typ.) vcc=900v, vge=15v, rg=1.5 , tj=125c switching time vs. gate resistance (typ.) switching time vs. collector current (typ.) vcc=900v, vge=15v, rg=1.5 , tj= 25c reversebiassafeoperatingarea(max.) switching loss vs. gate resistance (typ.) 10 100 1000 10000 0 100 200 300 400 500 600 collector current : ic [a] switchin g time : ton, tr, toff, tf [ nsec ] ton toff tr tf 10 100 1000 10000 0 100 200 300 400 500 600 collector current : ic [a] s w i tc hi n g t i me : ton , tr , to ff, t f[ nsec ] ton tr tf toff 10 100 1000 10000 0.1 1.0 10.0 100.0 gate resistance : rg [ ] switchin g time : ton, tr, toff, tf [ nsec ] tr tf ton toff 0 25 50 75 100 125 150 0 100 200 300 400 500 600 collector current : ic [a] switching loss : eon, eoff, err [ mj/pulse ] eon(125c) eon(25c) eoff(125c) err(125c) err(25c) eoff(25c) 0 50 100 150 200 250 300 0.1 1.0 10.0 100.0 gate resistance : rg [ ] switching loss : eon, eoff, err [ mj/pulse ] eoff er r eon 0 200 400 600 800 0 500 1000 1500 collector-emitter voltage : vce [v] collector current : ic [a] * c ms5f6137 13 11 transient thermal resistance a (max.) reverse recovery characteristics (typ.) vcc=900v, vge=15v, rg=1.5 forward current vs. forward on voltage (typ.) chip 0 100 200 300 400 500 600 700 800 01234 forwardonvoltage:vf[v] forward current : if [a] t j =125c tj=25c 10 100 1000 0 100 200 300 400 500 600 forward current : if [a] reverse recovery current : irr [ a ] reverse recovery time : trr [ nsec ] 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 pulse width : pw [sec] thermal resistanse : rth(j-c) [ c/w ] fwd igbt irr (125c) irr (25c) trr (125c) trr (25c) * c ms5f6137 13 12 w a r n i n g s - this product shall be used within its absolute maximum rating (voltage, current, and temperature). a this product may be broken in case of using beyond the ratings. -~?b1&??"opb5?b5 yb 2%lbb1%?e ]b*? ?!a bba?&??"opbu/?b b) ?!ab bnb+a?&?6b#??b bn ?'bbbmbab a? - connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. ?b1 &b1 pb*&?6b#??bb"?'bu((&ba?!a5 .b+?-~?b14fb.1? ?b-?2?b1b?b?bbu ?b2b?bbbfbbub ?bb) + 4b "?bg ~%lb1b 4#??bu4?bb*bb#bba? - use this product after realizing enough working on environment and considering of product's reliability life. this product may be broken before target life of the system in case of using beyond the product's reliability life. -~?b1 ?!a!cobu ? ?b.?ba?-~?b1 >5h?nb )/b*bbnb .b1 a??-~?bu1?!abb) bba?-~?b1 >5h?n bu/?b b) ?!abb"?'a?-]'?b1"??nbkbm b.&?6b#??b bn?'bbbmbab a? - if the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. 2db?-? b?(?6)hbgbtb#? { &?b ]#?2dbgbt%lbbu=bc!co b* ?!abbob"?'a?-~??(?b?-e%lb1 ;.=b2b*bbab bva? - use this product within the power cycle curve (technical rep.no. : mt5f12959). power cycle capability is classified to delta-tj mode which is stated as above and delta-tc mode. delta-tc mode is due to rise and down of case temperature (tc), and depends on cooling design of equipment which use this product. in application which has such frequent rise and down of tc, well consideration of product life time is necessary. ?-~?b2a?b?babbpb_bjb|?nbfbb? ? b* ?!a bb:?-/?::?:?:?:w::?:?:?:?:?:?:?:?:?a?b?babbpb_bjb|(42?b.b2bb1<1:?:b. bkbn ?'b1 ?b.a?<1:?:ob.bkbn?'bbbmbab a?bbob2blbbt 2::?:o:?b1 4?b.bkbn 2btb?bbtb*bbma??-~?bub ?!ab bn4 b1| 2.3.b. =bbab a?blbbt 2b1 4?b5?'eb./bbn?'b2a?-~??nb. ? ?!e?bb)b ?!a bba? - never add mechanical stress to deform the main or control terminal. the deformed terminal may cause poor contact problem. %%56 ?b6 ?%56b. bu b b) ?bb b-bb* bba?a%56b1 ?b.bkbma??. )?b-b,bu?b/bb ?'bbbmbab a? - use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the rou g hness within 10um. also kee p the ti g htenin g tor q ue within the limits of this s p ecification. too lar g e convex of coolin g fin ma y cause isolation breakdown and this ma y lead to a critical accident. on the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. ? ?b?b^b?b2b?bsbm ?b ?'?4fb*2bu 100mm b* 100um ? a?-+5yb1&;bb2 10um ? b.bb) bba?a1?"b- 2 ?bm bbb&b"bmb bnb+?-~?b&?'<#??bu/bba?2?" pb."?b bn?'bbbmbab a?bab"a?1?"b- 3 ?bmbgbibbb%lbbbnb+a? ?-~?b+ ? ?b?b^b?b14fb.$4b!bb)| 2b?bb-bma? 2#??b.'lbbnbb+bbbmbab a? - in case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. if the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. confirm spreading state of the thermal compound when its applying to this product. (spreading state of the thermal compound can be confirmed by removing this product after mounting.) &?6bu ? ?b?b^b?b.bm ?bbn4b.b2a? 2 bu#? ;b bnb"bdb1bnb?b?bab?b?%lbub ?!abb#bba? ?a?2?b /bb"bma? ? :b 1?b#b&b"bmb bnb+a?bnb?b?bab?b?b ? ?b.&?6 k ?b."bblb a?| 2? {b.bkbn 2#??b.'lbbn pbbbmbab a? bnb?b?bab?b?bub bn4b.b2a?-~? k5yb.bnb?b?bab?b?b"bb&b)bbn pbu#?.zbb)bb#bba? :s-]bb"?b.&?6bubmb2b b b+bnb?b?bab?b?b1"bbm u'bu#?.zb bn pb bab a?:? - it shall be confirmed that igbt's operating locus of the turn-off voltage and current are within the rbsoa specification. this product may be broken if the locus is out of the rbsoa. bzbb?beb?5?b?5 yb1 g t0?0b:?:?:a:|:? ?} ]b.bbnbb+bu#?.zbb) bba?:?:?:a:|:?b1%?ebu/?b b) ?!ab bnb+&?6b#?? b bn(?hbbbmbab a? - if excessive static electricity is applied to the control terminals, the devices may be broken. implement some countermeasures against static electricity. ?%56b.1?"b-5r5 ?b bbob"?'a?&?6b#??b bn?'bbbmbab a?bmb(b25r5 ??%wbusbb) bba? * c ms5f6137 13 13 :? :? : :? : :? :? : - fuji electric device technology is constantly making every endeavor to improve the product quality and reliability. however, semiconductor products may rarely happen to fail or malfunction. to prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the fuji electric device technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. ??5?b?b?b_btb?bjb?bbsbb2&?b b -~?b1?/b+ >5hb10 b. &bdb)bbab a?bbba? ?-~?b24b"?!bb"bma? .? g tb bn?'bbbmbab a???5?b?b?b_btb?bjb?bbsb-~ ?-~?b14bab"b2.? g tba?&?b+bb) q0? pb? + 4 %lb.bkbn/w!b.?b bn?bg$ 3"?b-?bu/bbb-bbkb b. l43.3.b?g ~4? [.3.b?.? g t4? [.3.b-b,_ k#? ; b1b"bdb1? ?bu.bb) bba? - the application examples described in this specification only explain typical ones that used the fuji electric device technolo gy p roducts. this s p ecification never ensure to enforce the industrial p ro p ert y and other ri g hts, nor license the enforcement rights. ? ?}?b..%0?bb)bbn!a b2a???5?b?b?b_btb?bjb?bbsb-~?bu ?!abb" ?-+"?b-!a bu.??b bnbeb1b*bbma? ? ?}?b.bkb&b)?:2--a?b b1 ?- ?b1sb.?b bn ;4bab"b2s-b1.5.bu-b beb1b*b2bbmbab bva? - the product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. when you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, a please apply after confirmation of this product to be satisfied about system construction and required reliability. ? ?}?b..%0?bbob"-~?b2a? qnb.bbbrbnbkb b- a + b* ?!abbobn?zbbnbb2brbtb?b?b.!abblbobnbb+bu ""?b+bb).3.b?-~1gbbob"beb1b*b2bbmbab bva?? ?}?b1-~?bu0? ?za?)?)~a?)v$]na? ?"n?za? 6 ?a? ?) &??zbbnbb2brbtb?b?b-b,a? $ v!a1\b;b1b ?!abub .b14b2a?brbtb?b?t? ?b6-e t?/b. )/b bnbb+bub#?.zb1 a?b ?!a bba? if there is any unclear matter in this specification, please contact fuji electric device technology co.,ltd. w a r n i n g s - never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. the module structure may be broken. &?6bu-]'?b.s-]b bn4b.a? %%56bg ?%56b.1?"b- bu b b-bb* bba?%56t1gb#??b bn(?hbbbmbab a? - in case of insufficient -vge, erroneous turn-on of igbt may occur. -vge shall be set enough value to prevent this malfunction. (recommended value : -vge = -15v) 1rb?b_b]btbmbb?5?:?:-:?:?b /bbab b+.? p?bu/bb (?hbbbmbab a?.? p?bu/bbb-b qb.:?:-:?:?b2 ? ?b- ob* .3obb) bba?ab?q o:w:?:w:?:-:?:?:w:?:w:?:?:?:-:? - in case of higher turn-on dv/dt of igbt, erroneous turn-on of opposite arm igbt may occur. use this product in the most suitable drive conditions, such as +vge, -vge, rg to prevent the malfunction. bzbb?beb?:w:?::?:?:?:wb7 bb+??b]bb?b1c cccb.? p?bu/bb (?hbbbmbab a?.? p?bu/bbb-b qb11?b-b?bb_b? ? ?b:?:-:?:?:?:w:?:-:?:?:?:w:?:?%lbb*b ?!a bba? - this product may be broken by avalanche in case of vce beyond maximum rating vces is applied between c-e terminals. use this product within its absolute maximum voltage. :-:?:?:abu/?b b"5?b bbob"?'a?b]b?bb?brbbbu/bbb)&?6#??b bn?'bbbmbab a?:-:?:?b2b &??opb1%?e ] b*b ?!a bba? |
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